Light emitting devices based on silicon nanostructures
Although silicon is the dominant semiconductor today, lightemitting devices are currently based on compound semiconductorsdue to their direct band-gap, which promotes fast radiativerecombination. However, in nanometer-size silicon structures,carrier confinement enhances the radiative recombination,w...
| Main Author: | |
|---|---|
| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
KTH, Elektroniksystemkonstruktion
2000
|
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2943 |