Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investiga...

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Bibliographic Details
Main Author: Pejnefors, Johan
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och informationsteknik, IMIT 2001
Subjects:
chemical vapor deposition (CVD)
bipolar junction transistor (BJT)
heterojunction bipolar transistor (HBT)
silicon-germanium (SiGe)
epitaxy
poly-Si emitter
in situ doping
non-selective epitaxy (NSEG)
loading effect
emissivity effect
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