Hydrogen diffusion and ion implantation in silicon carbide
Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived....
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2003
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3482 |