Hydrogen diffusion and ion implantation in silicon carbide
Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived....
Main Author: | Janson, Martin |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
KTH, Mikroelektronik och informationsteknik, IMIT
2003
|
Subjects: | |
Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3482 |
Similar Items
-
Associação Brasileira de Escritores: dinâmica de uma disputa Brazilian Association of Writers: dynamics of a dispute
by: Ana Amélia de Moura Cavalcante de Melo
Published: (2011-12-01) -
Sintering of silicon carbide
by: Fuentes, Ricardo I
Published: (2005) -
Silicon Carbide High Temperature Logic
by: Lee, Te-Hao
Published: (2011) -
Amerika Birleşik Devletlerinde Kütüphanecilik Eğitimi
by: Jean E. Lowrie
Published: (1983-12-01) -
Amerika Notları Bir Rapor ve Düşündürdükleri
by: Özer Soysal
Published: (1964-12-01)