SiGeC Heterojunction Bipolar Transistors

SiGeC Heterojunction Bipolar Transistors

Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial grow...

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Bibliographic Details
Main Author: Suvar, Erdal
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och informationsteknik, IMIT 2003
Subjects:
Silicon-Germanium-Carbon (SiGeC)
Heterojunction bipolar transistor (HBT)
chemical vapor deposition (CVD)
selective epitaxy
non-selective epitaxy
collector design
high-frequency measurement
dopant segregation
thermal stability
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674

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