Optical studies of surface recombination velocity in 4H-SiC epitaxial layer
In this work optical studies of the effect of surface passivation for surface recombination velocity at the interface between 4H-SiC epitaxial layer and various passivation layers are presented. Four samples have been used consisting of three main parts: thin film oxide layer, 4H-SiC epitaxial layer...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2011
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37225 |