High power bipolar junction transistors in silicon carbide
As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific...
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| Format: | Others |
| Language: | English |
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KTH, Mikroelektronik och Informationsteknik, IMIT
2005
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854 |