Characterization of dielectric layers for passivation of 4H-SiC devices
Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the s...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och tillämpad fysik, MAP
2006
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4229 http://nbn-resolving.de/urn:isbn:978-91-7178-532-9 |