Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers
Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based stru...
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| Format: | Others |
| Language: | English |
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KTH, Mikroelektronik och tillämpad fysik, MAP
2008
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4648 http://nbn-resolving.de/urn:isbn:978-91-7178-866-5 |