Silicon Nanowires for Biomolecule Detection

Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. F...

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Bibliographic Details
Main Author: Elfström, Niklas
Format: Doctoral Thesis
Language:English
Published: KTH, Materialfysik 2008
Subjects:
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4695
http://nbn-resolving.de/urn:isbn:978-91-7178-902-0