Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well ab...
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| Format: | Others |
| Language: | English |
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KTH, Integrerade komponenter och kretsar
2012
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-63804 http://nbn-resolving.de/urn:isbn:978-91-7501-244-5 |