Simulation and Optimization of SiC Field Effect Transistors
Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices an...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2004
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-81 |