Electro-thermal simulations and measurements of silicon carbide power transistors

Electro-thermal simulations and measurements of silicon carbide power transistors

The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and te...

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Bibliographic Details
Main Author: Liu, Wei
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och informationsteknik, IMIT 2004
Subjects:
Electronics
silicon carbide
power device
metal semiconductor field-effect transistor
bipolar junction transistor
electro-thermal simulation
Elektronik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86

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