Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high curre...
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Format: | Doctoral Thesis |
Language: | English |
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KTH, Integrerade komponenter och kretsar
2012
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320 http://nbn-resolving.de/urn:isbn:978-91-7501-365-7 |