Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high curre...

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Bibliographic Details
Main Author: Buono, Benedetto
Format: Doctoral Thesis
Language:English
Published: KTH, Integrerade komponenter och kretsar 2012
Subjects:
silicon carbide
power device
BJT
diode
simulation
characterization
current gain
on-resistance
breakdown voltage
forward voltage drop
degradation
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320
http://nbn-resolving.de/urn:isbn:978-91-7501-365-7

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320
http://nbn-resolving.de/urn:isbn:978-91-7501-365-7

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