Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO

Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at...

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Bibliographic Details
Main Author: Chen, Shula
Format: Doctoral Thesis
Language:English
Published: Linköpings universitet, Funktionella elektroniska material 2014
Subjects:
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102594
http://nbn-resolving.de/urn:isbn:978-91-7519-464-6