Growth of GaN on lattice matched AlInN substrates
This project was planed in order to study the effect of growth and crystalline quality of GaN on lattice matched Al1-xInxN seed layer. The GaN lattice matched Al0.81Ino.19N seed layer was grown by co-sputtering of Al and In target using only N2 as a sputtering gas in a direct current (DC) reactive m...
| Main Authors: | , |
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| Format: | Others |
| Language: | English |
| Published: |
Linköpings universitet, Institutionen för fysik, kemi och biologi
2008
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| Subjects: | |
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11395 |