CVD solutions for new directions in SiC and GaN epitaxy
This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117878 http://nbn-resolving.de/urn:isbn:978-91-7519-084-6 (print) |