Fabrication and characterisation of a novel MOSFET gas sensor
A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. In orde...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Institutionen för systemteknik
2002
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1292 |