A computational study on indium nitride ALD precursors and surface chemical mechanism

A computational study on indium nitride ALD precursors and surface chemical mechanism

Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be grown using Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD), but the availability of precursors and knowledge of the underlaying chemical reactions is limited. In this study the ga...

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Bibliographic Details
Main Author: Rönnby, Karl
Format: Others
Language:English
Published: Linköpings universitet, Kemi 2018
Subjects:
Computational Chemistry
Chemical Vapour Deposition
Atomic Layer Deposition
Indium nitride
gas phase decomposition
surface mechanism
Physical Chemistry
Fysikalisk kemi
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144426

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144426

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