CVD Growth of Silicon Carbide for High Frequency Applications
Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. With the introdu...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2001
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15070 http://nbn-resolving.de/urn:isbn:91-7373-081-5 |