Growth and characterization of Ge quantum dots on SiGe-based multilayer structures
Thermistor material can be used to fabricate un-cooled IR detectors their figure of merit is the Temperature Coefficient of Resistance (TCR). Ge dots in Si can act as a thermistor material and they have a theoretical TCR higher than for SiGe layers but they suffer from intermixing of Si into the Ge d...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Institutionen för fysik, kemi och biologi
2009
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-16674 |