Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors
For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. GaN, a semiconductor with wide bandgap, high critical breakdown fiel...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2021
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175678 http://nbn-resolving.de/urn:isbn:9789179296292 |