Optical Spectroscopy of GaN/Al(Ga)N Quantum Dots Grown by Molecular Beam Epitaxy
GaN quantum dots grown by molecular beam epitaxy are examined by micro-photoluminescence. The exciton and biexciton emission are identified successfully by power-dependence measurement. With two different samples, it can be deduced that the linewidth of the peaks is narrower in the thicker deposited...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Institutionen för fysik, kemi och biologi
2009
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19821 |