Silicon surface passivation via ultra-thin SiO2, TiO2, and Al2O3 layers
Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. Surface passivation...
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| Format: | Others |
| Language: | English |
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Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik
2019
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-75913 |