Modeling of Electrostatics and Drain Current in Nanoscale Double-Gate MOSFETs
This work comprises a new technique for 2D compact modeling of short-channel, nanoscale, double-gate MOSFETs. In low-doped devices working in the subthreshold regime, the potential distribution is dominated by the capacitive coupling between the body contacts. This 2D potential is determined by an a...
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| Format: | Doctoral Thesis |
| Language: | English |
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Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon
2007
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-1729 http://nbn-resolving.de/urn:isbn:978-82-471-3568-6 |