Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates
Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O...
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Uppsala universitet, Institutionen för materialkemi
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ndltd-UPSALLA1-oai-DiVA.org-uu-46512013-01-08T13:04:03ZAtomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide SubstratesengTörndahl, TobiasUppsala universitet, Institutionen för materialkemiUppsala : Acta Universitatis Upsaliensis2004Inorganic chemistryAtomic Layer DepositionALDcoppercopper(I) oxidecopper(I) nitridedeposition pathwayCuClCu(hfac)2oxide substratesepitaxyDFTab-initioOorganisk kemiInorganic chemistryOorganisk kemiThin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates. Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water. For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results. Doctoral thesis, comprehensive summaryinfo:eu-repo/semantics/doctoralThesistexthttp://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4651urn:isbn:91-554-6081-XComprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 1104-232X ; 1035application/pdfinfo:eu-repo/semantics/openAccess |
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language |
English |
format |
Doctoral Thesis |
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Inorganic chemistry Atomic Layer Deposition ALD copper copper(I) oxide copper(I) nitride deposition pathway CuCl Cu(hfac)2 oxide substrates epitaxy DFT ab-initio Oorganisk kemi Inorganic chemistry Oorganisk kemi |
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Inorganic chemistry Atomic Layer Deposition ALD copper copper(I) oxide copper(I) nitride deposition pathway CuCl Cu(hfac)2 oxide substrates epitaxy DFT ab-initio Oorganisk kemi Inorganic chemistry Oorganisk kemi Törndahl, Tobias Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
description |
Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates. Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water. For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results. |
author |
Törndahl, Tobias |
author_facet |
Törndahl, Tobias |
author_sort |
Törndahl, Tobias |
title |
Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
title_short |
Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
title_full |
Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
title_fullStr |
Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
title_full_unstemmed |
Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates |
title_sort |
atomic layer deposition of copper, copper(i) oxide and copper(i) nitride on oxide substrates |
publisher |
Uppsala universitet, Institutionen för materialkemi |
publishDate |
2004 |
url |
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4651 http://nbn-resolving.de/urn:isbn:91-554-6081-X |
work_keys_str_mv |
AT torndahltobias atomiclayerdepositionofcoppercopperioxideandcopperinitrideonoxidesubstrates |
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1716507788924944384 |