Electronic Structure Calculations of Point Defects in Semiconductors

Electronic Structure Calculations of Point Defects in Semiconductors

In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. The native defects are a...

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Bibliographic Details
Main Author: Höglund, Andreas
Format: Doctoral Thesis
Language:English
Published: Uppsala universitet, Fysiska institutionen 2007
Subjects:
Physics
electronic structure calculations
point defects
semiconductor
formation energy
equilibrium solubility limit
thermodynamic equilibrium concentration
transfer levels
negative-U
(110) surface
diffusion
activation energy
solar cells
Fysik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926
http://nbn-resolving.de/urn:isbn:978-91-554-6916-0

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926
http://nbn-resolving.de/urn:isbn:978-91-554-6916-0

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