CVD Growth of SiC on Novel Si Substrates
Silicon Carbide has been a semiconductor material of interest as a high power and temperature replacement for Silicon (Si) in harsh environments due to the higher thermal conductivity and chemical stability of SiC. The cost, however, to produce this material is quite high. There are also defects in...
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Scholar Commons
2003
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| Online Access: | https://scholarcommons.usf.edu/etd/1438 https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2437&context=etd |