Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor
The goal of this thesis is to present the design and development of a chemical vapor deposition reactor for the growth of high quality homoepitaxy silicon carbide films for electronic device applications. The work was performed in the Nanomaterials and Nanomanufacturing Research Center at the Univer...
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| Format: | Others |
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Scholar Commons
2003
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| Online Access: | https://scholarcommons.usf.edu/etd/1480 https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2479&context=etd |