Raman spectroscopy of InAs/GaAs quantum dots patterned by nano-indentation
Patterns of InAs/GaAs quantum dots (QDs) grown by the combination of nanoindentation technique and molecular beam epitaxy were studied. The resulting QDs tend to preferentially nucleate on indented areas rather than other regions. We studied the strain on the indentations, regions surrounding the in...
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| Format: | Others |
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Scholar Commons
2007
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| Online Access: | http://scholarcommons.usf.edu/etd/2226 http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3225&context=etd |