High growth rate SiC CVD via hot-wall epitaxy

High growth rate SiC CVD via hot-wall epitaxy

This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizontal hot-wall chemical vapor deposition (CVD) reactors. The goal of the research was to develop a growth process that maximized the growth rate and produced films of smooth morphology. The epitaxial gro...

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Bibliographic Details
Main Author: Myers-Ward, Rachael L
Format: Others
Published: Scholar Commons 2006
Subjects:
Silicon carbide
Chemical vapor deposition
Epitaxial layers
High growth speeds
Low-pressure
American Studies
Arts and Humanities
Online Access:http://scholarcommons.usf.edu/etd/2642
http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3641&context=etd

Internet

http://scholarcommons.usf.edu/etd/2642
http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3641&context=etd

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