Low-Power and Robust Level-Shifter with Contention Mitigation for Memory and Standalone Applications
The scaling down of transistor sizes has imposed significant challenges in today's technology. Memories such as eDRAM, are experiencing poor retention time because of challenges such as reference voltage variation, high transistor leakage, and low cell capacitance. It can be seen that we must c...
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| Format: | Others |
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Scholar Commons
2015
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| Online Access: | https://scholarcommons.usf.edu/etd/5555 https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=6755&context=etd |