Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor

Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications inc...

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Bibliographic Details
Main Author: Stevens, Lorin E.
Format: Others
Published: DigitalCommons@USU 2013
Subjects:
AIGaN
COMSOL
HEMT
HFET
Multiphysics
Simulation
Electrical and Computer Engineering
Electromagnetics and photonics
Mechanical Engineering
Online Access:http://digitalcommons.usu.edu/etd/1506
http://digitalcommons.usu.edu/cgi/viewcontent.cgi?article=2542&context=etd

Internet

http://digitalcommons.usu.edu/etd/1506
http://digitalcommons.usu.edu/cgi/viewcontent.cgi?article=2542&context=etd

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