Reliability Analysis of Hafnium Oxide Dielectric Based Nanoelectronics

With the physical dimensions ever scaling down, the increasing level of sophistication in nano-electronics requires a comprehensive and multidisciplinary reliability investigation. A kind of nano-devices, HfO2-based high-k dielectric films, are studied in the statistical aspect of reliability as wel...

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Bibliographic Details
Main Author: Wan, Rui
Published: Trace: Tennessee Research and Creative Exchange 2008
Subjects:
Online Access:http://trace.tennessee.edu/utk_graddiss/534