Synthesis of silicon/germanium nanowires and field emission studies of 1-D nanostructures

Using the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are grown. We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Base...

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Bibliographic Details
Main Author: Bae, Joonho, 1972-
Format: Others
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/2152/15970