Synthesis of silicon/germanium nanowires and field emission studies of 1-D nanostructures
Using the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are grown. We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Base...
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Format: | Others |
Language: | English |
Published: |
2012
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Online Access: | http://hdl.handle.net/2152/15970 |