Protein-mediated nanocrystal assembly for floating gate flash memory fabrication

As semiconductor device scaling is reaching the 45 nm node, the need for novel device concept, architecture and new materials has never been so pressing as today. Flash memories, the driving force of semiconductor memory market in recent years, also face the same or maybe more severe challenges to m...

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Bibliographic Details
Main Author: Tang, Shan, 1975-
Format: Others
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/2152/18156