Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs
In the past few decades, Si-based CMOS technology is approaching to its physical quantum limit by scaling down the gate length and gate oxide thickness to achieve higher drive current for low power and high speed application. High k/III-V stack provides an alternative solution because III-V based me...
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| Format: | Others |
| Language: | en_US |
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2013
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| Online Access: | http://hdl.handle.net/2152/21961 |