Novel 3-D IC technology
For many decades silicon based CMOS technology has made continual increase in drive current to achieve higher speed and lower power by scaling the gate length and the gate insulator thickness. The scaling becomes increasingly challenging because the devices are approaching physical quantum limits. T...
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| Format: | Others |
| Language: | en |
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2014
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| Online Access: | http://hdl.handle.net/2152/24925 |