Study of initial void formation and electron wind force for scaling effects on electromigration in Cu interconnects

Study of initial void formation and electron wind force for scaling effects on electromigration in Cu interconnects

The continuing scaling of integrated circuits beyond 22nm technology node poses increasing challenges to Electromigration (EM) reliability for Cu on-chip interconnects. First, the width of Cu lines in advanced technology nodes is less than the electron mean free path which is 39nm in Cu at room temp...

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Bibliographic Details
Main Author: Wu, Zhuojie
Format: Others
Published: 2014
Subjects:
Semiconductor
Interconnects
Electromigration
Electron wind force
Scaling
Resistance trace
Void
Scattering
Reactive ion etching
Electron beam lithography
Anisotropic wet etching
Stress
Modeling
Online Access:http://hdl.handle.net/2152/25145

Internet

http://hdl.handle.net/2152/25145

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