SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography
A highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming...
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| Format: | Others |
| Language: | en |
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2014
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| Online Access: | http://hdl.handle.net/2152/26200 |