High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

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Bibliographic Details
Main Author: Lu, Nan
Format: Others
Language:English
Published: 2008
Subjects:
Hafnium oxide
Dielectrics
Gate array circuits
Online Access:http://hdl.handle.net/2152/2826

Internet

http://hdl.handle.net/2152/2826

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