Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

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Bibliographic Details
Main Author: Kelly, David Quest
Format: Others
Language:English
Published: 2008
Subjects:
Metal oxide semiconductor field-effect transistors > Design and construction
Germanium compounds
Germanium crystals
Chemical vapor deposition
Online Access:http://hdl.handle.net/2152/2903

Internet

http://hdl.handle.net/2152/2903

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