III-V nitride semiconductor-based ultraviolet photodetectors
Visible-blind and solar-blind ultraviolet photodetectors based on GaN/AlGaN were designed, fabricated, and characterized for commercial and military applications. High performance back-illuminated solar-blind MSM achieved external quantum efficiency of ~48%. The dark current of 40x40μm MSM was less...
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| Format: | Others |
| Language: | English |
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2015
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| Online Access: | http://hdl.handle.net/2152/29863 |