III-V nitride semiconductor-based ultraviolet photodetectors
Visible-blind and solar-blind ultraviolet photodetectors based on GaN/AlGaN were designed, fabricated, and characterized for commercial and military applications. High performance back-illuminated solar-blind MSM achieved external quantum efficiency of ~48%. The dark current of 40x40μm MSM was less...
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ndltd-UTEXAS-oai-repositories.lib.utexas.edu-2152-298632015-09-20T17:31:38ZIII-V nitride semiconductor-based ultraviolet photodetectorsYang, Bo, active 21st centuryVisible-blindSolar-blindUltraviolet photodetectorsGaN/AlGaNMilitary applicationsMSMVisible-blind and solar-blind ultraviolet photodetectors based on GaN/AlGaN were designed, fabricated, and characterized for commercial and military applications. High performance back-illuminated solar-blind MSM achieved external quantum efficiency of ~48%. The dark current of 40x40μm MSM was less than the instrument measurement limitation of 20fA for a bias <100V. No photoconductive gain was observed. With an n-type doped high-Al ratio "window" Al₀.₆Ga₀.₄N layer, back-illuminated solar-blind p-i-n photodiode achieved a quantum efficiency of ~55% at zero-bias. Absorption edge study of both MSM and p-i-n photodetectors, based on device spectral responses, resulted in a performance comparison of MSMs and p-i-ns, as the solar-blind photodetection requires a sharp solar-blind rejection. Photoconductive detectors and avalanche photodetectors, with the internal gain advantage, have been discussed as well. A 30μm diameter GaN avalanche photodiode achieved a gain >23, with a dark current less than 100pA. The breakdown showed a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown. SiC APDs, as candidates for visible-blind applications, have been designed, fabricated and characterized. An avalanche gain higher than 10⁵, with a dark current less than 1nA, showed the potential of SiC APD replacing PMTs for high sensitivity visible-blind UV detection. A silicon-based optical receiver has been presented in the Appendix. With the photodiode internal avalanche gain ~4, a sensitivity ~-6.9dBm at 10Gbps has been achieved.text2015-05-14T18:43:08Z2015-05-14T18:43:08Z2003-122015-05-14Thesiselectronichttp://hdl.handle.net/2152/29863engCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works. |
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Visible-blind Solar-blind Ultraviolet photodetectors GaN/AlGaN Military applications MSM |
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Visible-blind Solar-blind Ultraviolet photodetectors GaN/AlGaN Military applications MSM Yang, Bo, active 21st century III-V nitride semiconductor-based ultraviolet photodetectors |
description |
Visible-blind and solar-blind ultraviolet photodetectors based on GaN/AlGaN were designed, fabricated, and characterized for commercial and military applications. High performance back-illuminated solar-blind MSM achieved external quantum efficiency of ~48%. The dark current of 40x40μm MSM was less than the instrument measurement limitation of 20fA for a bias <100V. No photoconductive gain was observed. With an n-type doped high-Al ratio "window" Al₀.₆Ga₀.₄N layer, back-illuminated solar-blind p-i-n photodiode achieved a quantum efficiency of ~55% at zero-bias. Absorption edge study of both MSM and p-i-n photodetectors, based on device spectral responses, resulted in a performance comparison of MSMs and p-i-ns, as the solar-blind photodetection requires a sharp solar-blind rejection. Photoconductive detectors and avalanche photodetectors, with the internal gain advantage, have been discussed as well. A 30μm diameter GaN avalanche photodiode achieved a gain >23, with a dark current less than 100pA. The breakdown showed a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown. SiC APDs, as candidates for visible-blind applications, have been designed, fabricated and characterized. An avalanche gain higher than 10⁵, with a dark current less than 1nA, showed the potential of SiC APD replacing PMTs for high sensitivity visible-blind UV detection. A silicon-based optical receiver has been presented in the Appendix. With the photodiode internal avalanche gain ~4, a sensitivity ~-6.9dBm at 10Gbps has been achieved. === text |
author |
Yang, Bo, active 21st century |
author_facet |
Yang, Bo, active 21st century |
author_sort |
Yang, Bo, active 21st century |
title |
III-V nitride semiconductor-based ultraviolet photodetectors |
title_short |
III-V nitride semiconductor-based ultraviolet photodetectors |
title_full |
III-V nitride semiconductor-based ultraviolet photodetectors |
title_fullStr |
III-V nitride semiconductor-based ultraviolet photodetectors |
title_full_unstemmed |
III-V nitride semiconductor-based ultraviolet photodetectors |
title_sort |
iii-v nitride semiconductor-based ultraviolet photodetectors |
publishDate |
2015 |
url |
http://hdl.handle.net/2152/29863 |
work_keys_str_mv |
AT yangboactive21stcentury iiivnitridesemiconductorbasedultravioletphotodetectors |
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1716824457262137344 |