Scaling and process effect on electromigration reliability for Cu/low k interconnects
The microelectronics industry has been managing the RC delay problem arising from aggressive line scaling, by replacing aluminum (Al) by copper (Cu) and oxide dielectric by low-k dielectric. Electromigration (EM) turned out to be a serious reliability problem for Cu interconnects due to the implemen...
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| Format: | Others |
| Language: | English |
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2008
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| Online Access: | http://hdl.handle.net/2152/3146 |