Read/write assist circuits and SRAM design
This report discusses the design of read/write assist circuits which are used in a SRAM cell’s design to overcome the cell’s variations. It also explains the variability problems in a SRAM bit-cell and many approaches to address them. The basic operations, SNM concept, and write margin of an SRAM...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2152/ETD-UT-2009-12-692 |