Compensating process and temperature variation in 32nm CMOS circuits with adaptive body bias
As we scale down each process generation the degree of control we have on device parameters decreases. We are left to contend with a great deal of variability in process and environmental parameters. Process variation impacts dopant concentration, channel length, oxide thickness and other device par...
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| Format: | Others |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/2152/ETD-UT-2010-05-743 |