Mechanistic study of plasma damage to porous low-k : process development and dielectric recovery
Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2152/ETD-UT-2010-05-749 |