Structural phase transitions in hafnia and zirconia at ambient pressure

In recent years, both hafnia and zirconia have been looked at closely in the quest for a high permittivity gate dielectric to replace silicon dioxide in advanced metal oxide semiconductor field effect transistors (MOSFET). Hafnium dioxide or HfO2 is chosen for its high dielectric constant (five time...

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Bibliographic Details
Main Author: Luo, Xuhui
Format: Others
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/2152/ETD-UT-2010-08-1553