A study of electrical and material characteristics of III-V MOSFETs and TFETs with high-[kappa] gate dielectrics
The performance and power scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been historically achieved through shrinking the gate length of transistors for over three decades. As Si complementary metal-oxide-semiconductor (CMOS) scaling is approaching the physical and optic...
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| Format: | Others |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/2152/ETD-UT-2010-12-2184 |